Chapter 24: Semiconductor Devices and Electronic Circuits (Set-2)

In a p–n junction at equilibrium, diffusion current is balanced by which current?

A Drift current
B Convection current
C Eddy current
D Displacement current

The depletion region contains mainly

A Free electrons
B Free holes
C Immobile ions
D Neutral atoms

Forward bias primarily reduces

A Doping density
B Depletion width
C Junction area
D Barrier charge

Reverse bias primarily increases

A Minority injection
B Forward voltage
C Depletion width
D Junction heating

Reverse saturation current is mainly set by

A Minority carriers
B Majority carriers
C Series resistor
D Junction area only

For silicon diode, cut-in voltage is roughly

A 0.1 V
B 0.3 V
C 0.7 V
D 2.0 V

Piecewise linear diode model mainly includes

A Only diode equation
B Only capacitance effect
C Only reverse leakage
D Threshold plus resistance

An ideal diode in forward bias behaves like

A Short switch
B Open switch
C Current source
D Voltage source

Diode junction capacitance is significant mainly at

A Low frequency
B DC only
C High frequency
D Zero bias only

Zener diode is used mainly as

A Rectifier element
B Current amplifier
C Light detector
D Voltage reference

In Zener regulation, output is taken across

A Series resistor
B Zener diode
C Transformer winding
D Input source

If input voltage rises, Zener current usually

A Decreases
B Becomes zero
C Increases
D Reverses direction

Zener dynamic resistance ideally should be

A Very low
B Very high
C Infinite
D Negative

Zener diode must always be used with

A Parallel capacitor
B Inductor choke
C Series resistor
D Heat sensor

Tunnel diode is made by

A Light doping
B Heavy doping
C No doping
D Metal junction

Negative resistance means current decreases when

A Voltage decreases
B Temperature decreases
C Light increases
D Voltage increases

Tunnel diode is often used in

A Power rectifiers
B DC generators
C Microwave oscillators
D Heating coils

LED is generally operated in

A Forward bias
B Reverse breakdown
C Zero bias only
D Open circuit

LED brightness mainly depends on

A Reverse current
B Junction temperature only
C Forward current
D Wire length

LCD uses liquid crystals to control

A Heat flow
B Light transmission
C Sound waves
D Magnetic fields

A solar cell is basically a

A p–n junction
B Forward diode
C Inductor coil
D Capacitor bank

Solar cell delivers maximum current when

A Circuit open
B Light removed
C Circuit shorted
D Reverse biased

Solar cell delivers maximum voltage when

A Circuit shorted
B Circuit open
C Load minimum
D Frequency high

Clamping circuit shifts waveform by adding

A AC component
B Magnetic flux
C Heat energy
D DC component

Clipping circuit removes part of waveform above a

A Set level
B Resonant level
C Noise level
D Drift level

A flyback diode is placed across

A Resistor load
B Battery terminals
C DC motor coil
D LED series resistor

A diode OR gate uses diodes to perform

A Addition
B Logic OR
C Logic AND
D Subtraction

A voltage doubler circuit is used to

A Increase DC level
B Halve AC
C Reduce ripple only
D Increase frequency

Full-wave rectifier output frequency is

A Same as input
B Half input
C Twice input
D Zero frequency

Ripple factor is a measure of

A DC smoothness
B Transformer ratio
C Diode breakdown
D AC content in output

Rectifier efficiency mainly compares

A AC input voltage
B Diode temperature
C DC output power
D Transformer size

Transformer utilization factor is higher for

A Bridge rectifier
B Half-wave rectifier
C Open circuit
D Zener regulator

In CB configuration, current gain is

A β
B γ
C α
D 1/β

Emitter follower is also called

A Common base
B Common emitter
C Common drain
D Common collector

CE configuration is widely used because it gives

A No current gain
B High voltage gain
C Zero phase shift
D No amplification

Q-point of an amplifier is set by

A AC signal only
B Heat sink only
C DC biasing
D Output load only

Saturation region in BJT means both junctions are

A Forward biased
B Reverse biased
C Unbiased
D Broken down

Cutoff region in BJT means base–emitter junction is

A Forward biased
B Shorted
C Reverse biased
D Broken down

A JFET is a

A Bipolar device
B Unipolar device
C Light device
D Thermal device

JFET gate is normally kept

A Forward biased
B Shorted to drain
C Floating always
D Reverse biased

FET transconductance relates change in

A Vds with Id
B Ig with Vgs
C Id with Vgs
D Vgs with Vds

Depletion-mode MOSFET can conduct at

A Zero gate voltage
B Only high Vgs
C Only reverse Vgs
D Only at breakdown

Enhancement-mode MOSFET needs Vgs

A Below threshold
B Above threshold
C Exactly zero
D Negative always

In MOSFET, gate oxide mainly provides

A Low resistance
B High current gain
C Electrical insulation
D Light emission

Common source FET amplifier generally gives

A Voltage gain
B Unity gain
C No phase change
D Current blocking

Common drain amplifier is also called

A Emitter follower
B Common base
C Common gate
D Source follower

RC coupling in amplifiers is mainly used for

A Power transmission
B Microwave circuits
C Audio frequency stages
D High-voltage rectifiers

Bandwidth of an amplifier is defined by

A fH − fL
B Midband gain only
C fH + fL
D 2fL − fH

Negative feedback generally makes amplifier gain

A Increase greatly
B Become infinite
C Decrease slightly
D Become unstable

Negative feedback usually changes output impedance to

A Increase greatly
B Decrease
C Become infinite
D Become negative

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