In electrostatics, the curl of electric field equals
A charge density
B magnetic flux
C zero
D potential
Electrostatic fields are conservative.
The electric field between large parallel plates (ignoring edges) is
A zero
B uniform
C proportional to r
D inversely proportional to r²
Plate geometry creates uniform field.
In Poisson’s equation, the Laplacian of potential equals
A free charge density
B −ρ/ε₀
C ∇·E
D zero
Polarization in dielectric is strongest when
A no E-field
B weak E-field
C strong E-field
D D is zero
Capacitors in parallel add because
A voltages add
B fields add
C plates effectively increase area
D separation decreases
The D field includes
A free charge effects
B bound charge effects
C both
D neither
Divergence of D = free charge density.
Dielectric constant <1 is possible in
A metals
B perfect insulators
C plasmas
D all solids
Ohm’s law in vector form
A J = σE
B E = σJ
C J = ρE
D J = E/R
Resistivity of insulator is
A low
B moderate
C high
D zero
Surface charge density on conductor creates
A tangential field
B normal field
C circular field
D no field
Potential of uniformly charged ring on axis
A decreases with distance
B constant
C increases with distance
D zero everywhere
If ∇²V > 0 at a point, charge density is
A positive
B negative
C zero
D infinite
From Poisson: ∇²V = −ρ/ε₀.
In a dielectric, electric field is reduced due to
A conduction
B induced dipoles
C magnetization
D drift
Capacitance of parallel plates varies inversely with
A area
B ε
C separation
D voltage
Potential of dipole at large distance is proportional to
A 1/r
B 1/r²
C 1/r³
D 1/r⁴
A conductor is
A equipotential
B nonequipotential
C partially potential
D constant current surface
Mobility relates
A drift velocity and E
B force and charge
C current and voltage
D field and energy
For spherical Gaussian surface, E-field depends on
A angle
B distance
C thickness
D area
Induced dipoles in dielectrics are
A permanent
B temporary
C random
D independent of field
In conductor, current density proportional to
A E²
B E
C J²
D σ²
Charge in Gaussian surface affects field
A outside only
B inside only
C both
D not at all
Field exists everywhere due to charge.
Potential difference is path independent because
A E is non-conservative
B E is conservative
C charges move freely
D potential varies randomly
Dielectric strength refers to
A permittivity
B maximum E before breakdown
C conductivity
D relaxation time
The E-field inside ideal dipole at center is
A zero
B infinite
C finite
D negative
Resistivity depends on
A material
B temperature
C impurities
D all of these
Laplace equation holds for
A charge-filled region
B conductor interior
C empty (charge-free) region
D resistors only
For conductor surface, tangential E is
A zero
B constant
C very high
D equal to D
Capacitance is property of
A charge
B geometry
C resistance
D current
Dielectric constant of vacuum is
A 0
B 1
C 2
D infinite
A polarization vector opposite to E-field means
A normal
B anti-aligned
C ferroelectric
D impossible
Polarization aligns with E in linear isotropic dielectrics.
If D = 0 everywhere, then
A free charge = 0
B bound charge = 0
C both zero
D electric field = 0
Unit of electric displacement D
A C/m
B C/m²
C V/m
D A/m²
Capacitance of spherical capacitor increases if
A outer radius decreases
B permittivity increases
C inner radius decreases
D spacing increases
Drift velocity increases with
A decreasing E
B increasing E
C decreasing mobility
D increasing resistivity
Total electric flux through closed surface depends on
A area
B shape
C enclosed charge
D permittivity only
Capacitance increases when
A area increases
B distance increases
C ε decreases
D none
In linear dielectric, P is
A proportional to E
B proportional to E²
C independent of E
D perpendicular to E
Ohmic heating power is
A I²/R
B IR
C I²R
D 1/IR
Relaxation time is
A σ/ε
B ε/σ
C 1/(εσ)
D σ²/ε
A dielectric becomes conductor on
A polarization
B alignment
C breakdown
D heating
Resistivity of semiconductor decreases when
A dopants removed
B temperature increases
C E decreases
D electrons removed
D-field is normal to
A conductor surface
B dielectric always
C any surface
D E-field always
Potential due to point charge decreases as
A 1/r
B 1/r²
C 1/r³
D constant
Electric field lines start from
A negative charges
B positive charges
C both
D neither
If σ = 0, the material is
A conductor
B semiconductor
C dielectric
D superconductor
A strong dielectric reduces
A P
B E inside
C potential
D charge
Conduction current exists in
A metals only
B dielectrics only
C vacuum only
D materials with free charges
In electrostatics, magnetic field is
A zero
B constant
C varying
D irrelevant
Joule heating greatest when
A resistance small
B current large
C voltage zero
D E small
A dielectric increases capacitance because
A increases charge
B reduces effective field
C increases breakdown
D reduces resistivity
Polarization reduces internal E → more charge stored at same V.