Author: Study Clue

A silicon diode carries 1 mA at 0.62 V. Assuming n = 1, Vt = 26 mV, the current at

For a silicon diode at 300 K, the thermal voltage (Vt) is closest to A 5 mV B 0.26 V

When forward current in a diode increases, its dynamic resistance generally A Increases sharply B Becomes infinite C Stays constant

In a p–n junction at equilibrium, diffusion current is balanced by which current? A Drift current B Convection current C

In an unbiased p–n junction, what forms near the junction due to diffusion? A Conduction band B Depletion region C

In the nearly-free electron model, the first band gap size is mainly proportional to A Lattice temperature only B Electron

In Kronig–Penney, band width mainly increases when adjacent wells have A Higher tunneling B Lower tunneling C No periodicity D

In Kronig–Penney, increasing barrier height mainly tends to A Shrink band gaps B Remove periodicity C Fix Fermi level D

In a crystal, allowed energy ranges are mainly called A Forbidden gaps B Lattice nodes C Energy bands D Photon

In the Kronig–Penney picture, why do energy bands form in a crystal A Random atomic collisions B Single isolated atoms