Chapter 21: Crystal Structure and Reciprocal Lattice (Set-2)

A conventional unit cell is mainly chosen because it

A Has one lattice point
B Minimizes cell volume
C Removes basis atoms
D Shows full symmetry

In a cubic system, the unit cell angles are

A 90° each
B 60° each
C 120° each
D Unequal angles

A crystal system with a = b ≠ c and all angles 90° is

A Orthorhombic system
B Tetragonal system
C Hexagonal system
D Triclinic system

A crystal system with a ≠ b ≠ c and all angles 90° is

A Monoclinic system
B Rhombohedral system
C Hexagonal system
D Orthorhombic system

The basic repeating geometric arrangement of lattice points is a

A Crystal basis
B Structure factor
C Bravais lattice
D Ewald sphere

In simple cubic, the nearest-neighbor distance equals

A a/2 value
B √2 a length
C √3 a length
D a edge length

In BCC, the nearest-neighbor distance is

A √3 a/2
B a/2 value
C √2 a/2
D a edge length

In FCC, the nearest-neighbor distance is

A a/2 value
B √2 a/2
C √3 a/2
D √3 a value

A close-packed plane in FCC is the

A (100) plane
B (110) plane
C (200) plane
D (111) plane

The stacking sequence for FCC close-packed planes is

A ABCABC stacking
B ABAB stacking
C AABB stacking
D ABCC stacking

The packing fraction of BCC is approximately

A 0.52 value
B 0.74 value
C 0.68 value
D 0.80 value

In XRD, the “2θ” value is the

A Bragg angle
B Plane tilt angle
C Crystal axis angle
D Scattering angle

When lattice constant increases, d(hkl) for fixed (hkl)

A Decreases always
B Increases directly
C Becomes zero
D Stays unchanged

For cubic crystals, the plane (200) has spacing compared to (100)

A Half spacing
B Same spacing
C Double spacing
D Triple spacing

The direction [111] in cubic crystals points along

A Cube edge line
B Face diagonal line
C Plane normal only
D Body diagonal line

The direction [110] in a cubic cell is along

A Cube edge line
B Body diagonal line
C Face diagonal line
D Face normal line

A zone axis is best described as a

A Common direction
B Family of planes
C Diffraction peak set
D Unit cell edge

Interplanar spacing depends mainly on

A Atomic number only
B Temperature only
C Detector distance
D Lattice geometry

In reciprocal space, larger real-space spacing d means

A Larger |G|
B Smaller |G|
C Same |G| always
D Random |G| only

The Laue condition for diffraction is essentially

A Δk equals G
B G = k only
C k equals zero
D d equals lambda

Bragg’s law is a statement of

A Destructive interference
B Thermal vibration
C Constructive interference
D Crystal defects

For fixed d and θ, increasing order n requires

A Smaller wavelength
B Same wavelength
C Random wavelength
D Larger wavelength

In powder diffraction, peak positions mainly depend on

A d-spacings
B Structure factor
C Grain boundaries
D Polarization only

Peak intensity is strongly affected by

A Lattice constant only
B Structure factor
C Wavelength only
D Bragg angle only

The atomic form factor generally decreases as

A Temperature decreases
B Grain size increases
C Density increases
D Angle increases

Systematic absences are most useful to identify

A Lattice type
B Crystal color
C Crystal density
D Thermal expansion

In BCC, the (100) reflection is

A Always strongest
B Always present
C Systematically absent
D Temperature dependent

In FCC, the (100) reflection is

A Allowed peak
B Only at high T
C Only at low T
D Absent peak

In FCC, the first allowed reflection is usually

A (111) reflection
B (100) reflection
C (110) reflection
D (200) reflection

In BCC, the first allowed reflection is usually

A (100) reflection
B (110) reflection
C (111) reflection
D (200) reflection

The Lorentz-polarization factor mainly corrects

A Peak positions
B d-spacing values
C Lattice constant
D Measured intensities

A “basis” in crystallography means

A Atom group attached
B Lattice point grid
C Reciprocal vectors set
D Bragg planes set

The reciprocal lattice points correspond to

A Real lattice points
B Crystal defects only
C Allowed diffraction spots
D Grain boundaries

The first Brillouin zone contains all k-points

A Farthest from origin
B On zone boundary
C Outside reciprocal space
D Closest to origin

The Γ point in band diagrams represents

A Zone corner point
B Zone center point
C Edge midpoint only
D Random symmetry point

A simple way to build Brillouin zones is using

A Wigner–Seitz method
B Real space cell
C Scherrer equation
D Miller direction rule

Grain boundaries are categorized as

A Point defects
B Line defects
C Volume defects
D Planar defects

Broadening of XRD peaks can be caused by

A Large crystal size
B Small crystallite size
C Perfect lattice only
D Zero strain only

If microstrain increases in a sample, XRD peaks typically

A Broaden more
B Sharpen more
C Disappear always
D Shift to zero

Phonons are quanta of

A Electron motion
B X-ray photons
C Defect diffusion
D Lattice vibrations

Thermal expansion occurs mainly because

A Miller indices change
B Bragg angle increases
C Interatomic potential asymmetry
D Density always rises

Crystal anisotropy means properties depend on

A Direction in crystal
B Only temperature
C Only atomic number
D Only grain size

A symmetry operation that leaves a crystal unchanged can be

A Random translation
B Electron scattering
C Grain boundary slip
D Rotation about axis

Indexing diffraction peaks mainly means assigning

A Crystal colors
B (hkl) values
C Unit cell density
D Debye factor

For cubic crystals, a common indexing check is using

A h+k+l only
B Atomic number ratios
C (h²+k²+l²) ratios
D Density ratios

In reciprocal space, Bragg reflection corresponds to

A k equals zero
B Zone folding only
C Density matching
D Ewald intersection

The term “k-space” is another name for

A Reciprocal space
B Real space lattice
C Defect space
D Grain space

A reflection labeled (hkl) comes from planes that are

A Parallel to [hkl]
B Randomly oriented
C Always close packed
D Perpendicular to [hkl]

The basis causes different crystals to have

A Same intensities
B Different intensities
C Same selection rules
D Same packing always

A key practical use of XRD is to

A Identify crystal phase
B Measure atomic radius only
C Remove grain boundaries
D Create unit cells

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