Chapter 24: Semiconductor Devices and Electronic Circuits (Set-5)

A silicon diode carries 1 mA at 0.62 V. Assuming n = 1, Vt = 26 mV, the current at 0.68 V is closest to

A 2 mA
B 100 mA
C 10 mA
D 1 A

A Zener regulator has Vs = 12 V, Vz = 6 V, series resistor 300 Ω, and load current 10 mA. Zener current is

A 0 mA
B 10 mA
C 20 mA
D 30 mA

A center-tap full-wave rectifier gives secondary half-winding peak Vm = 10 V. PIV of each diode is

A 20 V
B 10 V
C 14 V
D 40 V

A tunnel diode is biased for oscillation. It must be kept in

A Forward ohmic region
B Reverse saturation region
C Breakdown region
D Negative resistance region

A solar cell has Voc = 0.60 V, Isc = 2.0 A, fill factor 0.75. Maximum power is

A 0.60 W
B 0.90 W
C 1.20 W
D 1.50 W

For a CE BJT, if α = 0.99, β is closest to

A 9
B 49
C 99
D 199

In MOSFET saturation (long-channel), the condition is

A Vds < Vgs
B Vds ≥ Vgs−Vt
C Vds = 0
D Vgs < Vt

In a CE amplifier, if emitter bypass capacitor is removed, the voltage gain will

A Increase greatly
B Become zero
C Decrease
D Change polarity

An RC-coupled amplifier has fL = 100 Hz and fH = 100 kHz. Bandwidth is

A 100 kHz
B 100.1 kHz
C 1 kHz
D 99.9 kHz

If open-loop gain A = 10,000 and feedback factor β = 0.01, closed-loop gain is closest to

A 50
B 99
C 90
D 100

In a bridge rectifier, if each diode drop is 0.7 V, peak load voltage for Vm = 12 V is

A 10.6 V
B 12 V
C 11.3 V
D 9.6 V

A diode clipper uses a 5.1 V Zener in reverse. The output peak is limited near

A 0.7 V
B 10.2 V
C 5.1 V
D 12 V

A JFET has Idss = 10 mA and Vp = −4 V. At Vgs = −2 V, Id is

A 5.0 mA
B 2.5 mA
C 7.5 mA
D 10 mA

A CE transistor has Ic = 2 mA and β = 100. Base current is

A 2 μA
B 200 μA
C 2 mA
D 20 μA

A solar cell’s efficiency increases most directly when

A Temperature rises
B Fill factor rises
C Series resistance rises
D Shunt falls

A CE amplifier shows upper cutoff reduced mainly by

A Miller capacitance
B Coupling capacitor
C Emitter resistor
D Zener effect

In negative feedback, if Aβ = 9, gain reduction factor is

A 1
B 5
C 10
D 9

For a half-wave rectifier with Vm = 20 V, ideal average DC output is

A 12.7 V
B 6.37 V
C 20 V
D 31.8 V

For a full-wave rectifier with Vm = 20 V, ideal average DC output is

A 6.37 V
B 20 V
C 31.8 V
D 12.7 V

If diode current follows I = Is e^(V/Vt), dynamic resistance at current I is

A V/I
B I/Vt
C Vt/I
D Is/Vt

In a Zener regulator, line regulation improves when series resistor is

A Decreased
B Increased
C Removed
D Shorted

In a Zener regulator, load regulation improves when Zener dynamic resistance is

A High
B Infinite
C Low
D Negative

In a BJT, leakage current mainly increases with

A Decreasing temperature
B Increasing temperature
C Increasing load
D Decreasing Vcc

For a CE amplifier, input impedance increases most by using

A Emitter follower
B Collector follower
C Common base stage
D Zener clamp

A MOSFET is ESD-sensitive mainly due to

A Thick depletion
B Low mobility
C Thin gate oxide
D High resistance

In a diode, avalanche breakdown is favored by

A Narrow depletion
B Wide depletion
C High doping
D Low voltage

A diode’s reverse recovery time matters most in

A DC measurement
B Zener reference
C LCD display
D High-speed switching

In a bridge rectifier, if load current is 1 A, each conducting diode current is

A 0.5 A
B 2 A
C 1 A
D 4 A

A CE amplifier without proper bias may distort first by entering

A Active region
B Cutoff or saturation
C Zener breakdown
D Pinch-off only

In an RC-coupled amplifier, low-frequency gain drops mainly because

A Capacitors short
B β increases
C gm increases
D Capacitors open

In CE amplifier, power gain is high mainly because it provides

A Both gains
B High voltage only
C High current only
D No gain

A JFET as voltage-controlled resistor operates mainly in

A Breakdown region
B Saturation region
C Ohmic region
D Cutoff region

In MOSFET switching, “on-resistance” mainly affects

A Leakage current
B Conduction loss
C Threshold drift
D Optical output

A solar panel series connection mainly increases

A Current
B Fill factor
C Irradiance
D Voltage

A solar panel parallel connection mainly increases

A Voltage
B Current
C Band gap
D Voc only

If a Zener diode has Vz = 5 V and Iz changes by 10 mA, and rd = 5 Ω, voltage change is

A 0.5 V
B 5 V
C 0.05 V
D 10 V

For a diode, small-signal resistance at 10 mA (n=1, Vt=26 mV) is closest to

A 2.6 Ω
B 26 Ω
C 260 Ω
D 0.26 Ω

In a BJT, if β increases with temperature, Q-point may shift toward

A Lower Ic
B Higher Ic
C Zero Vcc
D Lower Vbe

Negative feedback reduces distortion mainly by making amplifier

A More nonlinear
B More noisy
C More unstable
D More linear

If feedback increases bandwidth, the gain–bandwidth tradeoff means

A Both rise always
B Noise disappears
C Gain drops
D Output clips more

In a CE amplifier, input coupling capacitor mainly affects

A Upper cutoff
B Lower cutoff
C Output phase
D Power rating

The most correct reason bridge rectifier does not need center tap is

A Uses four diodes
B No transformer used
C Uses Zener clamp
D Uses both halves

In a diode OR gate, output is HIGH when

A All inputs LOW
B Only two HIGH
C Any input HIGH
D Only one LOW

A clamp circuit needs capacitor mainly to

A Store charge
B Increase gain
C Reduce PIV
D Raise Vt

If an LED is reverse-biased beyond rating, it may fail because of

A Light saturation
B Junction breakdown
C Low current
D High band gap

In LCD, polarizers are used mainly to

A Produce light
B Increase current
C Reduce heat
D Control polarization

In a solar cell, maximum power point tracking is needed because

A Voc is constant
B Light never changes
C Load varies
D Temperature fixed

A transistor h-parameter model is used mainly as

A Thermal model
B Two-port model
C Optical model
D Mechanical model

For stable voltage reference, which Zener property is most important?

A Low rd
B High rd
C High ripple
D High leakage

In an op-amp with negative feedback, the most accurate statement is

A V+ ≫ V−
B V+ ≈ V−
C Input currents large
D Gain equals A

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